A team of researchers at Penn State University have created a working computer using ultra-thin, two-dimensional materials instead of silicon, potentially paving the way for thinner, faster, and more ...

Abstract: Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance ...

Saptarshi Das and Subir Ghosh’s research represents a major leap toward building thinner, faster and more energy-efficient ...

Fabricated via thermal evaporation, the champion perovskite-perovskite-silicon triple-junction solar cell reached an ...

Approach highlights methods for using lower-cost molybdenum electrodes and the impact of oxygen on impeding electrical ...

Explore next-gen transistor, from InGaOx GAA structures to Intel’s RibbonFET, unlocking higher density, efficiency, and performance.

Battery start-ups and larger labs scrutinize materials in every part of electric vehicle systems, especially anodes ...

HPQ Silicon (TSXV:HPQ) received positive results from the world’s top fumed silica manufacturer, which tested fumed silica ...

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first working CMOS computer entirely from atom-thin 2D materials. Using molybdenum ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical rutile GeO 2 Schottky barrier diode (rutile GeO 2 is a tetragonal crystal ...

Improved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. Imec has set a new ...