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Electronics3601d
Thermal management in high-power GaN-based RF systems
Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...
C&EN4d
Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
In this work, we report on strain relaxation and crystalline defects in heterostructures consisting of compositionally graded AlGaN epitaxial layers tensile-strained between a GaN-buffer and a GaN-cap ...
IEEE4d
Hot-carrier degradation phenomena in lateral and vertical DMOS transistors
Abstract: The hot-carrier degradation behavior of both a lateral and a vertical integrated DMOS transistor is investigated in detail by the analysis of the electrical data, charge pumping measurements ...
Compound Semiconductor9d
The promise of halogen-free vapour phase epitaxy
Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals” Appl. Phys. Express. 10 045504 (2017). The strengths of GaN are not just a high breakdown voltage that results from the wide ...
C&EN25d
Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...
IEEE28d
600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor
Abstract: This letter reports a GaN vertical trench metal-oxide-semiconductor field-effect transistor (MOSFET) with normally-off operation. Selective area regrowth of n±GaN source layer was performed ...
Electronics Weekly29d
PCIM: GaN motor drive ICs
Navitas Semiconductor is aiming at motors up to 600W with a GaN motor drive IC. “Specifically designed for motor drive applications, this integrated solution combines two GaN FETs in a half-bridge ...