Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

In this work, we report on strain relaxation and crystalline defects in heterostructures consisting of compositionally graded AlGaN epitaxial layers tensile-strained between a GaN-buffer and a GaN-cap ...

Abstract: The hot-carrier degradation behavior of both a lateral and a vertical integrated DMOS transistor is investigated in detail by the analysis of the electrical data, charge pumping measurements ...

Abstract: Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of ...

Technical innovations begin in academic research or military projects and are filtered down to mass markets. In the last few ...