Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...

Infineon Technologies AG today announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology ...

We investigate hard-switched and resonant modes of operation in a ladder SC DPP converter implemented with GaN transistors. Operation within supply limits of each embedded computer is demonstrated in ...

Regardless of the transistor technology, the parasitic impedances added to the circuit by the PCB layout must be understood and managed for the circuit to function correctly, reliably, and without ...

SpacePath Communications, a division of ETL Systems, that provides high-performance satellite uplink amplifiers for the global SATCOM market, has introduced its highest power stand-alone C-band ...

This is because the main semiconductor components involved - the radio frequency amplifiers made from a wonder conductor called Gallium Nitride (GaN) - need to be much quicker, emit greater power ...

These latest additions provide engineers with two distinct options for controlling GaN transistors in power conversion and motion-control systems, delivering improvements in efficiency, power density, ...

Consiglio Nazionale delle Ricerche (CNR) − Istituto per la Microelettronica e Microsistemi (IMM), Strada VIII, n. 5 - Zona Industriale, I-95121 Catania, Italy Consiglio Nazionale delle Ricerche (CNR) ...