Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...

Abstract: A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation ... X-band HPA has been designed by directly measuring the transistor ...

Abstract: In this paper, a technique for the prediction of the optimum performance operation of GaN transistors is described. It is based on a small set of low-frequency measurements to acquire the ...

The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...