After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

Abstract: High-frequency measurements of the 1.3-μm-long gate AlGaN-GaN HEMTs have been performed at temperatures ranging from 23 to 187/spl deg/C. The cutoff frequency f T decreased with increasing ...

As a case study a 0.25-μm GaN HEMT is considered. The extracted model has been validated through comparison with vector nonlinear measurements carried out at 10 GHz.