Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...

Efficient Power Conversion (EPC), a developer of enhancement-mode gallium nitride (GaN) power transistors and ICs ... and greater power density in a compact 3.3 mm x 2.6 mm PQFN package. The EPC2366 ...

With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beachhead across low-voltage applications that have long been dominated by silicon,” - Alex Lidow, EPC CEO and co ...

Soitec will supply Taiwanese foundry Powerchip Semiconductor Manufacturing Corp. (PSMC) with 300 mm substrates featuring an integrated release layer that is transistor layer transfer (TLT) ready to ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically ... by silicon,” said EPC CEO Alex Lidow. Packaged in ...

Navitas Semiconductor’s next-generation power-supply unit meets OCP requirements for high-power, high-density server racks.

BLYTHEWOOD, S.C. — State officials have fined Richland County $3 million over what inspectors said were violations found at the Scout Motors plant construction site near Blythewood. The South ...

The MPAA’s official PG-13 rating for M3GAN 2.0 includes a detailed list of warnings: “strong violent content, bloody images, some strong language, sexual material, and brief drug references.” ...

The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...