GaN-on-Si is considered the best of both worlds marrying the high performance for GaN transistors with the scalability and cost-effective platform of silicon. However, it is a challenging design due ...

Abstract: A 302.5-GHz high-gain CMOS THz amplifier is proposed in this work. An electromagnetic (EM) modeling approach, verified by transistor measurements, is employed to optimize transistor layout, ...

Abstract: This letter presents a D-band three-stage differential low-noise amplifier (LNA) design using a joint-noise ... The LNA has a peak gain of 30.75 dB at 138 GHz, a minimum NF of 4.25–5.32 dB, ...

Elite RF designs and manufactures solid-state RF amplifiers entirely in-house at its 22,000-square-foot facility in Hanover Park, IL. The company offers solutions spanning 1 MHz to 40 GHz and output ...