Compound Semiconductor

2D MoS₂ FPGA integrates 4000 FETs

Now a Chinese team, led by Peng Zhou and Wenzhong Bao at Fudan University, has developed a top-gate (TG) 2D ...
EurekAlert!

First 2D semiconductor FPGA achieves wafer-scale integration

Researchers at Fudan University have achieved a breakthrough by fabricating the first Field-Programmable Gate Array (FPGA) ...

Study finds AI models store memories and logic in different neural regions

When engineers build AI language models like GPT-5 from training data, at least two major processing features emerge: ...
EDN

Mastering multi-physics effects in 3D IC design

Stacking dies introduces layers of complexity driven by multi-physics interactions, which must be addressed at the start of ...
Electronic Specifier

MSI products use ROHM’s AC adapter equipped EcoGaN Power Stage IC

ROHM announces that its EcoGaN power stage IC has been adopted in the AC adapter for MSI’s products, including gaming laptops ...
Semiconductor Engineering

Free-Space Gated Transistor In Wide Bandgap And Ultra Wide Bandgap Semiconductors (KAUST Et Al.)

A new technical paper titled “Lateral Semiconductor–Free-Space Gate Transistors” was published by researchers at KAUST and ...
IEEE

Investigation of Optimum Gate Structures for 1.2-kV SiC MOSFETs by Analyzing Avalanche and Short-Circuit Withstanding Capabilities

Abstract: This work explored the optimum gate structures of 1.2-kV SiC MOSFETs by analyzing avalanche capabilities using unclamped inductive switching tests and short-circuit capabilities. It found ...