PCIM Expo: GaN power electronics portfolio along the semiconductor value chain ... The current focus is on lateral and vertical components, monolithic integration, and highly insulating substrates ...

This achieves simpler control of the transistor than with a bidirectional transistor ... processed 4-inch GaN-on-SiC and GaN-on-sapphire wafers, GaN power ICs, integrated lateral and vertical GaN ...

The lateral HEMT power device, typically manufactured in a GaN-on-silicon production line, has several pros and cons compared with the more common vertical device architecture ... Direct-coupled FET ...

Efficient Power Conversion (EPC), a developer of enhancement-mode gallium nitride (GaN) power transistors and ICs, has announced that it is making available the EPC2366. 40 V GaN power transistor ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, ...

Efficient Power Conversion (EPC) has announced the availability of the EPC2366, a 40V, 0.8 mΩ GaN device designed to displace ...

The Fraunhofer Institute for Applied Solid State Physics IAF develops power electronic components based on the wide-bandgap compound semiconductor gallium nitride (GaN) to enable further developments ...