Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Regardless of the transistor technology, the parasitic impedances added to the circuit by the PCB layout must be understood and managed for the circuit to function correctly, reliably, and without ...

We investigate hard-switched and resonant modes of operation in a ladder SC DPP converter implemented with GaN transistors. Operation within supply limits of each embedded computer is demonstrated in ...

These latest additions provide engineers with two distinct options for controlling GaN transistors in power conversion and motion-control systems, delivering improvements in efficiency, power density, ...

Finwave will use this investment to accelerate revenue generation, expand its product portfolio and continue developing innovative GaN-on-Si technology for the following targeted market segments: High ...