Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...

Abstract: A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation ... X-band HPA has been designed by directly measuring the transistor ...

Abstract: In this paper, a technique for the prediction of the optimum performance operation of GaN transistors is described. It is based on a small set of low-frequency measurements to acquire the ...