In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024.

The need for high power in the VHF, UHF, and microwave bands has led to transistors that can easily supply tens to hundreds of watts at RF frequencies to 10 GHz and beyond. Most of these devices ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

San Francisco, CA. Qorvo at IMS 2016 highlighted several new products and features. The company debuted six new 50-V GaN transistors and said that its QPD1000 15-W GaN on SiC wideband input ...

Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

We’re starting to get excited about GaN power stages. The Orchard Audio Starkrimson Duo/Trio is the fourth power amplifier in less than two weeks ... the benefits of the latest gallium nitride (GaN) ...

Suitable for use in 2.9 to 3.5GHz S-Band radar amplifier systems, the devices are based on the company's 50V, 0.4µm GaN on SiC foundry process Performance rated at 85°C, both the 150W CGHV35150 and ...

RF GaN or Radio Frequency Gallium Nitride is a semiconductor technology used in the production of high-frequency electronic devices including amplifiers, transistors, and power devices for radio ...

In order to develop the necessary technology, the project Magellan — High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application — was launched in 2024.