Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

EPC aims to displace silicon mosfets from secondary-side synchronous rectifiers with its latest 40V GaN power transistor, designed specifically for 48V to 12V LLC dc-dc converters. “With the EPC2366, ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

How GaN is used in DC-DC power converters. Challenges and advantages of using GaN semiconductors. When designers need high-voltage to low-voltage DC-DC converter designs, both the input and output ...