Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...

Semiconductors are the foundation of electronic and Internet of Things (IoT) devices and telecommunication equipment. They ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

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Researchers say latch-effect could make GaN-based RF power amplifiers quicker, more powerful and more reliable New research ...

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Abstract: In this paper, a 2.6-GHz-band compact high power Doherty power amplifier (DPA) based on 0.5 µm GaN HEMT process for base station is presented. To reduce the size of amplifier, all the ...

Abstract: Gallium nitride (GaN) high electron mobility transistors (HEMTs) are quintessential prospect for the design of state-of-the-art power amplifiers (PAs). Within this context, this paper ...