The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...

With a total power budget of 280W and the ability to charge two 140W devices at once, the Zeus is a GaN charger like no other ...

Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...