Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...

Gallium nitride has proven to be an exceptional alternative to silicon, especially in devices bound for outer space. How GaN is used in DC-DC power converters. Challenges and advantages of using ...

A hybrid power platform combines ICeGaN HEMT devices and silicon IGBTs to ... a hybrid power solution from Cambridge GaN Devices combines the benefits of gallium-nitride (GaN) and silicon ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...