News

Compound Semiconductor2d
Japanese team makes GaN-HEMT on 2-Inch diamond substrate
Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...
EE World Online2d
GaN HEMT transistors target space applications with hermetically sealed packaging
Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...
American Institute of Physics6d
Diamonds pave the path toward cooler radio frequency devices
Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...
DATAQUEST2d
Infineon launches new radiation-hardened GaN transistors
Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...
Compound Semiconductor3d
Infineon launches rad-hard GaN HEMTs
Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...
Electronic Products21h
Infineon unveils rad-hard GaN transistors
Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.
Electronics3601d
Infineon debuts JANS-certified radiation-hardened GaN transistors
Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...
Fierce Electronics5d
Infineon radiation-hardened GaN transistors aim for space apps
Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...
Fudzilla6d
Infineon pushes GaN into space
DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...
Electropages1h
New radiation-hardened GaN transistors include one of the first DLA JANS-certified GaN device
The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and ...
RF Globalnet18h
WIN Semiconductors Announces Linearity Optimized 0.12µm GaN Power Process
The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...