Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and ...

The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...

Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC ...