After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Find more information on the Altmetric Attention Score and how the score is calculated. The persistent photoconductivity (PPC) of the n-type Ga-polar GaN was used to stimulate PC12 cells noninvasively ...

Abstract: Here, we report a unified analytical model for the 2-D electron gas density (nS) in AlGaN/GaN HEMTs, considering the carriers induced in the AlGaN layer (nB) to satisfy charge balance at ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...

Semiconductors are the foundation of electronic and Internet of Things (IoT) devices and telecommunication equipment. They ...

Existing integration approaches are based on an n-GaN/2DEG interconnection scheme using the selective area growth approach. Due to the limited area of interconnection interface between microLEDs and ...

Advances in GaN HEMT devices have led to a high FOM versus their silicon counterparts. However, they’re both still far from their theoretical limit. 6 SiC devices can withstand higher voltages ...