After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Abstract: A numerical device model is proposed for the design of reliable AlGaN/GaN HEMT structures. In the model, shear stress due to the inverse piezoelectric effect is used to predict ...

As a case study a 0.25-μm GaN HEMT is considered. The extracted model has been validated through comparison with vector nonlinear measurements carried out at 10 GHz.