After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

The ICeGaN module includes GaN high electron mobility transistors (HEMTs), along with sensor and surge protection ... is relatively independent of ambient temperature. The use of an AlN interlayer ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...

The GaN Journey Begins HEMT (High Electron Mobility Transistor ... EPC’s enhancement mode process begins with silicon wafers. A thin layer of Aluminum Nitride (AlN) is grown on the silicon to provide ...

In 2008, Fujitsu Laboratories developed a new 3-layer cap structure for GaN HEMTs - by sandwiching an aluminum-nitride (AlN) layer between n-type GaN layers - which can suppress the current when ...

“While most GaN devices are HEMTs, in this experimental study, we focused on GaN-on-Si MISHEMTs with AlN barriers as a crucial step towards addressing the demand for both high-power d-mode devices for ...

Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design ...

Teledyne has added three new devices to its lineup of off-the-shelf, space-screened GaN HEMTs for satellite and other high-reliability applications. The parts go through NASA Level 1 or ESA Class 1 ...

has come up with a 40V bi-directional GaN-on-Si enhancement mode HEMT for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company’s InnoGaN ...