Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN ... 2 V for the MOSFET and minus 3 V for a GaN HEMT (High Electron Mobility Transistor) or minus 7 V for a ...

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN package. Engineering samples and target datasheet are available upon request.

“We believe these markets need the unique power, bandwidth and efficiency combination GaN devices can offer and Nitronex is excited to offer a product optimized for this customer base.” The NPT1004 ...

EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge ... and is only 6.05 mm x 2.3 mm for increased power density. The EPC2104 is ideal for high frequency ...

Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a 'girl's best friend.' Their groundbreaking research focuses on gallium nitride (GaN) transistors ...

Researchers at the Oak Ridge National Laboratory (ORNL) recently successfully developed a transistor fashioned out of Gallium Nitride (GaN) that can withstand the heat and radiation near the core ...

She and a team of researchers recently created a high-electron mobility transistor, a device that amplifies and controls electrical current, using gallium nitride (GaN) with indium aluminum-nitride as ...