Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

The same SiP approach is used in Navitas’s latest half-bridge solution, which provides the front end to a pair of integrated GaN FET transistors (Fig. 3). The low-profile, low-inductance SiP ...

This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN ... 2 V for the MOSFET and minus 3 V for a GaN HEMT (High Electron Mobility Transistor) or minus 7 V for a ...

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN package. Engineering samples and target datasheet are available upon request.

The 80-V IGE033S08S1 has a typical on-resistance of 2.3 mΩ. Their new packages, combined with GaN technology, ensure low-resistance connections and minimal parasitics. Samples of the IGE033S08S1 and ...

“We believe these markets need the unique power, bandwidth and efficiency combination GaN devices can offer and Nitronex is excited to offer a product optimized for this customer base.” The NPT1004 ...

Researchers at the Oak Ridge National Laboratory (ORNL) recently successfully developed a transistor fashioned out of Gallium Nitride (GaN) that can withstand the heat and radiation near the core ...

Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a 'girl's best friend.' Their groundbreaking research focuses on gallium nitride (GaN) transistors ...

At 3.4eV GaN is a wide bandgap material. This compares to 1.4eV for gallium arsenide (GaAs) which is the other main high-frequency semiconductor process technology. Materials with a wider bandgap can ...

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN package. Engineering samples and target datasheet are available upon request.