Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation. Scientific Reports , 2022; 12 (1) DOI: 10.1038/s41598-022-23691-y Cite This Page : ...

While improvements in SiC crystal growth techniques have recently been made, managing crystallographic defect occurrences is still a significant challenge. Defects like dislocations and stacking ...