GaN Systems will speak of lateral GaN power transistors in automotive appliations at PCIM next week. The paper ‘Lateral GaN transistors – A replacement for IGBT devices in automotive applications’ ...

Without an area-specific doping technology, GaN devices are limited to horizontal HEMT structures. In these transistors, current travels along ... Planar structures require more area for a given ...

PCIM Expo: GaN power electronics portfolio along the semiconductor value chain ... The current focus is on lateral and vertical components, monolithic integration, and highly insulating substrates ...