In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024.

Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

Gallium nitride (GaN) technology is very well suited to the realisation of solid-state microwave power amplifiers. High electron mobility transistors (HEMTs) fabricated on GaN processes have high ...

San Francisco, CA. Qorvo at IMS 2016 highlighted several new products and features. The company debuted six new 50-V GaN transistors and said that its QPD1000 15-W GaN on SiC wideband input ...

The need for high power in the VHF, UHF, and microwave bands has led to transistors that can easily supply tens to hundreds of watts at RF frequencies to 10 GHz and beyond. Most of these devices ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

The transistor T1 works as a feedback regulated HF-amplifier and function as demodulator at the same time. The sensitivity of the receiver is dependent on the amount of feedback and can be adjusted by ...

Suitable for use in 2.9 to 3.5GHz S-Band radar amplifier systems, the devices are based on the company's 50V, 0.4µm GaN on SiC foundry process Performance rated at 85°C, both the 150W CGHV35150 and ...

Cree introduces Gallium Nitride power transistors in low cost plastic packaging for wireless infrastructure, including macro basestations and remote radio heads (RRH). The low-cost plastic-packaged ...

Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a 'girl's best friend.' Their groundbreaking research focuses on gallium nitride (GaN) transistors ...