Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

FBS-GAM02P-R-PSE, a similar module, but designed to drive external GaN transistors. In each case ... The note includes some LTspice modelling of a 40A 12 to 0.96V converter optimised to run at 200kHz, ...

Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...

In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024.

Why GaN-based power supplies are smaller and more efficient. Gallium-nitride (GaN) transistors are able to handle large currents at high switching speeds, leading to switching power supplies that ...

Are diamonds GaN's best friend? Revolutionizing transistor technology Date: December 21, 2023 Source: Osaka Metropolitan University Summary: A research team has fabricated a gallium nitride (GaN ...

As is typical with high-power drivers, these operate in a half-bridge configuration with identical N-channel GaN transistors (specifically part EPC2361) driven by dedicated gate drivers (that’s ...

Researchers at the Oak Ridge National Laboratory (ORNL) recently successfully developed a transistor fashioned out of Gallium Nitride (GaN) that can withstand the heat and radiation near the core ...

In order to develop the necessary technology, the project Magellan — High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application — was launched in 2024.