Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

and heat levels of silicon or GaN. But by using multiple devices in push-pull or parallel or combining amplifier outputs in transformers or networks, power levels up to about 20 to 40 W are possible.

NXP rolled out a family of gallium-nitride (GaN)-based RF power amplifiers (PAs ... challenges emerge when it comes to managing power and heat in the radio unit, which can consume from 200 ...

--(BUSINESS WIRE)--CAES, a leading provider of mission critical electronics for aerospace and defense, introduced a wideband, Gallium Nitride (GaN) based, high-power wideband RF amplifie ...

By combining the world's best performing GaN power amplifier (PA ... but it is also critical to improve the T/R module's heat dissipation characteristics as heat generation intensifies in tandem ...

The power savings from combining Cree’s highly efficient GaN on SiC power amplifiers with a highly ... transceivers significantly reduce the heat dissipated by massive MIMO arrays, resulting ...

Demand is increasing for power amplifier ... “The idea behind GaN-on-silicon is that the substrate is cheap, but the thermal conductivity of silicon is one-third that of silicon carbide. It’s a lot ...

DARPA has awarded Raytheon a $15m four-year contract to increase the power density of GaN power devices in military radar ... Key to this is the use of diamond to extract heat, with its thermal ...

In order to develop the necessary technology, the project Magellan—High Efficiency mm-Wave GaN Transistor High Power Amplifier for GEO and LEO Active Antenna Application—was launched in 2024.

We’re starting to get excited about GaN power stages. The Orchard Audio Starkrimson Duo/Trio is the fourth power amplifier in less than two weeks utilizing the technology that we’ve seen or heard.