Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...

Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...

Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...

5] Fig. 3: Super-junction GaN HEMT. Bias applied to the p-GaN pillars controls the behavior of the 2DEG, and therefore the flow of current.[5] Vertical devices put more power in less space Increasing ...

The gallium nitride (GaN) power device is a high electron mobility (HEMT) transistor that produces electrical energy by the controlling the freely moving electrons in the wide bandgap of the ...

GaN power devices, which are already utilised in consumer ... of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...