Integrating diamond heat spreaders in fully fabricated transistors offers a heat management solution for high-power radio ...

Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

Infineon unveils new family of radiation hardened Gallium Nitride (GaN) transistors, based on its CoolGan technology.

5] Fig. 3: Super-junction GaN HEMT. Bias applied to the p-GaN pillars controls the behavior of the 2DEG, and therefore the flow of current.[5] Vertical devices put more power in less space Increasing ...

DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...

The gallium nitride (GaN) power device is a high electron mobility (HEMT) transistor that produces electrical energy by the controlling the freely moving electrons in the wide bandgap of the ...

The qualification of the Beneq Transform platform by another leading GaN power device manufacturer ... offering flexibility across GaN HEMTs, ICs, and vertical devices. The vacuum-integrated ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

GaN power devices, which are already utilised in consumer ... of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...

The qualification of the Beneq Transform platform by another leading GaN power device manufacturer highlights ... offering flexibility across GaN HEMTs, ICs, and vertical devices. The ...