The ICeGaN module includes GaN high electron mobility transistors (HEMTs), along with sensor and surge protection ... is relatively independent of ambient temperature. The use of an AlN interlayer ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...

Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

The GaN Journey Begins HEMT (High Electron Mobility Transistor ... EPC’s enhancement mode process begins with silicon wafers. A thin layer of Aluminum Nitride (AlN) is grown on the silicon to provide ...

In 2008, Fujitsu Laboratories developed a new 3-layer cap structure for GaN HEMTs - by sandwiching an aluminum-nitride (AlN) layer between n-type GaN layers - which can suppress the current when ...

“While most GaN devices are HEMTs, in this experimental study, we focused on GaN-on-Si MISHEMTs with AlN barriers as a crucial step towards addressing the demand for both high-power d-mode devices for ...

Teledyne has added three new devices to its lineup of off-the-shelf, space-screened GaN HEMTs for satellite and other high-reliability applications. The parts go through NASA Level 1 or ESA Class 1 ...

Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design ...

Single-gate GaN HEMT as bidirectional switch in the low-voltage range Fraunhofer IAF has also made progress in the field of multi-level converters with bidirectional switches for blocking voltages ...

EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ ...