The ICeGaN module includes GaN high electron mobility transistors (HEMTs), along with sensor and surge protection ... is relatively independent of ambient temperature. The use of an AlN interlayer ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...

The GaN Journey Begins HEMT (High Electron Mobility Transistor ... EPC’s enhancement mode process begins with silicon wafers. A thin layer of Aluminum Nitride (AlN) is grown on the silicon to provide ...

“While most GaN devices are HEMTs, in this experimental study, we focused on GaN-on-Si MISHEMTs with AlN barriers as a crucial step towards addressing the demand for both high-power d-mode devices for ...

Teledyne has added three new devices to its lineup of off-the-shelf, space-screened GaN HEMTs for satellite and other high-reliability applications. The parts go through NASA Level 1 or ESA Class 1 ...

DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production ...

Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design ...

By adopting a GaN HEMT, Fujitsu Laboratories developed a compact, high-output GaN HEMT T/R module that covers the ultra-broadband C-Ku spectrum (6-18 GHz). Key features of the new technology are ...

Single-gate GaN HEMT as bidirectional switch in the low-voltage range Fraunhofer IAF has also made progress in the field of multi-level converters with bidirectional switches for blocking voltages ...

“While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon mosfets requires the use of a ...