It is the most studied semiconductor for GaN microelectronics. Coffie, R et al (2004) demonstrated a high-power GaN/AlGaN/GaN HEMT (high-electron-mobility transistor). It employs a thick cap layer to ...

but the GaN switch will do so. The high performance of the recessed-gate MIS-HEMT was achieved not only due to the low-damage ALE process, but also precise etching AlGaN thickness control.

A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...